GaN-On-Sapphire Wafer Manufacturer_GaN Substrate Supplier_氮化镓衬底厂家

2 Inch GaN-On-Sapphire Template

Dimensions: Ф 50.8 mm ± 1 mm
Thickness:4.5µm, 20 µm
Orientation:C-plane(0001) ± 0.5°
Useable Surface Area:> 90%
氮化镓晶片蓝宝石氮化镓衬底晶片

尺寸：2英寸
厚度：4.5um 20um
掺杂：非掺杂，硅掺杂，镁掺杂
衬底结构：GaN-On-Sapphire
4 Inch GaN-On-Sapphire Template

Dimensions: Ф 100 mm ± 0.1 mm
Thickness:4.5 µm, 20 µm
Orientation:C-plane(0001) ± 0.5°
Useable Surface Area:> 90%
氮化镓衬底晶片 4英寸GaN氮化镓衬底片

尺寸：4英寸
厚度：4.5um 20um
掺杂：非掺杂，硅掺杂
衬底结构：GaN-On-Sapphire
2 Inch Free-Standing GaN Substrate

Dimensions: Ф 50.8 mm ± 1 mm
Thickness: 350 ± 25 µm
Useable Surface Area: > 90%
Total Thickness Variation: ≤ 15 µm
氮化镓自支撑晶片 2英寸GaN衬底晶片

尺寸：2英寸
厚度：350um
掺杂：非掺杂，硅掺杂，铁掺杂
等级：测试级，研究级，产品级，优选级
4 Inch Free-Standing GaN Substrate

Dimensions: Ф 100 mm ± 1 mm
Thickness: 400 ± 50 µm
Useable Surface Area: > 90%
Total Thickness Variation: ≤ 40 µm
氮化镓自支撑衬底片 4英寸GaN氮化镓晶片

尺寸：4英寸
厚度：400um
掺杂：非掺杂，硅掺杂
电阻率：≤0.5Ω.cm
Square Free-Standing GaN Substrate

Dimension:10*15mm²
Thickness: 350±25um
Useable Surface Area:＞90%
Conduction Type: N Type,SI Type
10*10.5mm2方形氮化镓衬底晶片

尺寸：10*10.5mm²
厚度：350um
掺杂：非掺杂，硅掺杂，铁掺杂
电阻率：＜0.05Ω.cm
GaN Epitaxial On Si For RF HEMT

GaN-On-Si Epi Wafer For RF HEMT
Substrate Diameter:6 inch (111)
Substrate Thickness:1000um
Epi Layer Total Thickness: 1.5~2.0um
GaN Epitaxial On Si For Power HEMT

GaN-On-Si Epi Wafer For Power HEMT-D Mode
Substrate Diameter: 4-8 inch(111)
Substrate Thickness: 675,1000um
Epi Layer Total Thickness: 2~5.5um
硅基氮化镓外延片-D-Mode耗尽型

硅基氮化镓外延晶片
硅衬底尺寸: 4/6/8 inch
硅衬底厚度: 675um 1000um
保护层: GaN/SiN
Gan Epitaxial On Si For Power HEMT E-Mode

GaN-On-Si Epi Wafer For Power HEMT-E Mode
Substrate Diameter: 4-8 inch(111)
Substrate Thickness: 675,1000um
Epi Layer Total Thickness: 2~5.5um
硅基HEMT氮化镓外延片E-Mode增强型

硅基氮化镓外延晶片
硅衬底尺寸: 4/6/8 inch
硅衬底厚度: 675um 1000um
结构类型：E-Mode(增强型)
pGaN HEMT On Si Epi Wafer

GaN-On-Si Epi Wafer
Substrate Size: 4 inch,6 inch,8 inch
Substrate Thickness: 675um,1000um
GaN Buffer Layer: 2-3um

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