GaN Epitaxial On Si For RF HEMT

As the leading manufacturer and supplier of GaN (Gallium Nitride) Epi (Epitaxial) wafer and GaN-On-Si Epi Wafer For RF HEMT application. Homray Material Technology offers 2inch~8inch GaN (Gallium Nitride) on Si (Silicon) Epi (Epitaxial) wafer. The HEMT RF product is a state-of-the-art (Al,Ga)N/GaN heteroepitaxial layer structure deposited crack-free on a (111) high resistance Si-wafer for RF power applications. Homray Material Technology offers two standard HEMT structures: one having an Al0.25Ga0.75N barrier without an AlN spacer layer and the other one having an Al0.25Ga0.75N barrier with an AlN spacer layer. Custom barrier, cap layer and in-situ SiN designs are available upon request.

The epitaxial layer consists of an active heterostructure based on an AlGaN layer and a GaN channel, providing high electron mobility and low sheet resistivity.
The proprietary high-voltage buffer design offers low leakage currents, high breakdown voltage, low dispersion and a consistently low wafer bow.

Standard Layer Specification For RF HEMT
Please contact us for Power HEMT detailed structure.


Characterization Specifications


Standard Layer Structure for RF HEMT                  GaN Epi Wafer Picture