Home | 中文 English
  • Home
  • About Us
  • Products
  • News
  • Success Cases
  • Services
  • Contact Us
  • GaN Substrate Wafer
  • Free-Standing GaN
  • GaN-On-Sapphire Template
  • GaN Epitaxial Wafer
  • GaN HEMT Chip Class Wafer
Home > Products > GaN Substrate Wafer > GaN-On-Sapphire Template
  • 2 Inch GaN-On-Sapphire Template

    Dimensions: Ф 50.8 mm ± 1 mm
    Thickness:4.5µm, 20 µm
    Orientation:C-plane(0001) ± 0.5°
    Useable Surface Area:> 90%

  • 氮化镓晶片 蓝宝石氮化镓衬底晶片

    尺寸:2英寸
    厚度:4.5um 20um
    掺杂:非掺杂,硅掺杂,镁掺杂
    衬底结构:GaN-On-Sapphire
     

  • 4 Inch GaN-On-Sapphire Template

    Dimensions: Ф 100 mm ± 0.1 mm
    Thickness:4.5 µm, 20 µm
    Orientation:C-plane(0001) ± 0.5°
    Useable Surface Area:> 90%

  • 氮化镓衬底晶片 4英寸GaN氮化镓衬底片

    尺寸:4英寸
    厚度:4.5um 20um
    掺杂:非掺杂,硅掺杂
    衬底结构:GaN-On-Sapphire

Home<<1 >>Last
  • Home
  • About Us
  • Products
  • News
  • Success Cases
  • Services
  • Contact Us

M.P: +86-15366208370 ; +86-15366203573
E-mail: kim@homray-material.com;tina@homray-material.com
HMT Silicon Carbide (SiC) Wafer Website: www.sicwafer-hmt.com