Gan Epitaxial On Si For Power HEMT E-Mode

Homray Material Technology provides high-performance and high-quality GaN HEMT epitaxial wafers, including GaN-on-Si Epi wafer with Power HEMT E-mode and D-mode. We supply 2 inch,4inch,6inch,8inch GaN-on-Si Epitaxial Wafer with favourable price on the market in China. Silicon thickness is 675um and 1000um. Customized structure and layer parameters are available jin HMT company.

Benefits of using GaN 

• High power
• High frequency
  
• High power efficiency
  
• Low power consumption, energy saving
  
• High-temperature robustness
  
• Exceed the limitations of current Si power device
  

Standard Layer Specification For Power HEMT E-Mode

 

Characterization Specification

 
Standard Layer Structure