GaN Epitaxial(Epi) Wafer Manufacturer and supplier氮化镓衬底生产商

GaN Epitaxial On Si For RF HEMT

GaN-On-Si Epi Wafer For RF HEMT
Substrate Diameter:6 inch (111)
Substrate Thickness:1000um
Epi Layer Total Thickness: 1.5~2.0um
GaN Epitaxial On Si For Power HEMT

GaN-On-Si Epi Wafer For Power HEMT-D Mode
Substrate Diameter: 4-8 inch(111)
Substrate Thickness: 675,1000um
Epi Layer Total Thickness: 2~5.5um
硅基氮化镓外延片-D-Mode耗尽型

硅基氮化镓外延晶片
硅衬底尺寸: 4/6/8 inch
硅衬底厚度: 675um 1000um
保护层: GaN/SiN
Gan Epitaxial On Si For Power HEMT E-Mode

GaN-On-Si Epi Wafer For Power HEMT-E Mode
Substrate Diameter: 4-8 inch(111)
Substrate Thickness: 675,1000um
Epi Layer Total Thickness: 2~5.5um
硅基HEMT氮化镓外延片E-Mode增强型

硅基氮化镓外延晶片
硅衬底尺寸: 4/6/8 inch
硅衬底厚度: 675um 1000um
结构类型：E-Mode(增强型)
pGaN HEMT On Si Epi Wafer

GaN-On-Si Epi Wafer
Substrate Size: 4 inch,6 inch,8 inch
Substrate Thickness: 675um,1000um
GaN Buffer Layer: 2-3um
8 inch GaN-on-Si Epitaxial Wafer

GaN-On-Si Epi Wafer
Substrate Size: 8 inch
Substrate Thickness: 1000um
GaN Buffer Layer: 2-3um
GaN Epi grown on Si wafer

GaN-On-Si Epi Wafer
Substrate Size: 4/6/8 inch
Substrate Thickness: 675um 1000um
GaN Buffer Layer: 2-3um
GaN Epitaxial On SiC For Power HEMT

GaN-On-SiC Epi Wafer For Power HEMT
Substrate Size: 4 inch,6 inch
Substrate Thickness: 500um
GaN Buffer Layer: 2-3um
AlGaN/GaN On SiC HEMT Epi Wafer

GaN-On-SiC Epi Wafer
Substrate Size: 4 inch,6 inch
Substrate Thickness:500um
Substrate Type: 4H-SI
4英寸碳化硅基氮化镓外延片

碳化硅基氮化镓外延片
衬底尺寸: 4英寸，6英寸
衬底厚度: 500um
衬底类型：4H-SI半绝缘
GaN Epitaxial On Silicon Carbide For RF HEMT

GaN-On-SiC Epi Wafer For RF HEMT
Substrate Size: 4 inch,6 inch
Substrate Thickness: 500um
GaN Buffer Layer: 1.8um
AIN Spacer: 1nm
AlGaN/GaN-on-SiC Epi Wafer

GaN-On-SiC Epi Wafer
Substrate Size: 4 inch,6 inch
Substrate Thickness: 500um
Package: Wafer Cassette
AlGaN/GaN碳化硅基氮化镓外延片

GaN-On-SiC
衬底厚度: 500um
衬底尺寸: 4英寸，6英寸
衬底类型: 4H-SI半绝缘
GaN Epitaxial On Sapphire For HEMT

GaN-On-Sapphire Epi Wafer For Power/RF HEMT
Substrate Size: 2''3''4''6''
Substrate Thickness:430um 520um 650um
GaN Buffer Layer:2-4um
AIN Spacer:1nm
GaN Epitaxial Wafer For LED

GaN-On-Sapphire Epi Wafer For LED
Dimension: 4 inch
Substrate: PSS Sapphire
Thickness: 660±10um
Structure: GaN On Sapphire

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