2 Inch Free-Standing GaN Substrate

As the leading manufacturer and supplier of GaN (Gallium Nitride) substrate wafer,Homray Material Technology provide N type 350um thickness 2 inch GaN (Gallium Nitride)free standing substrate wafer for wide band-gap power semiconductor and LED markets. Homray Material Technology also manufactures GaN (Gallium Nitride ) on sapphire templates，10*15mm² free standing GaN substrate wafer, Non-Polar and Semi-Polar free standing GaN wafer these to integrated device manufacturers to create high performance power and RF device.

Gallium nitride (GaN) is a binary III/V direct bandgap semiconductor commonly used in light-emitting diodes since the 1990s. The compound is a very hard material that has a Wurtzite crystal structure. Its wide band gap of 3.4 eV affords it special properties for applications in optoelectronic, high-power and high-frequency devices. For example, GaN is the substrate which makes violet (405 nm) laser diodes possible, without use of nonlinear optical frequency-doubling.


Its sensitivity to ionizing radiation is low (like other group III nitrides), making it a suitable material for solar cell array for satellites. Military and space applications could also benefit as devices have shown stability in radiation environments.Because GaN transistors can operate at much higher temperatures and work at much higher voltages than gallium arsenide (GaAs) transistors, they make ideal power amplifiers at microwave frequencies.