

Founded in 2009, HMT is the reliable manufacturer and producer of SiC Wafer & HEMT GaN Epi Wafer & Pure GaN Wafer. Our core products include Silicon Carbide (SiC) Substrate Wafer (4H-N, 4H-SI, 4H-P), SiC Epi Wafer (N-Type and P-Type Epi Layer), and high-performance GaN-On-SiC Epi Wafer / GaN-On-Si Epi Wafer and GaN Wafer . Homray is dedicated to producing high-quality Wafers for the wide bandgap semiconductor industry. As a leading supplier of SiC Wafer and GaN Epi Wafer , the company has built a global network of dealers and partners across Europe, the United States, Southeast Asia, and South America. In 2023, HMT achieved worldwide sales exceeding USD 82 million.Widely recognized for its superior properties such as a wide bandgap, Silicon Carbide is considered the most promising compound semiconductor material for next-generation electronic devices. Thanks to its high critical electric field, SiC-based devices and modules enable both low energy losses and
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4 inch 4H-SiC Wafer Manufacturer
Diameter: 100±0.2mm
Grade: Production
Thickness: 350±25um
Type: Conductive N -
8 inch 4H-N Type SiC Wafer Producer
Diameter: 200±0.2mm
Grade: D/R/P
Thickness: 500±25um
Type: Conductive N -
GaN Epitaxial On Si For Power HEMT
GaN-On-Si Epi Wafer For Power HEMT-D Mode
Substrate Diameter: 4-8 inch(111)
Substrate Thickness: 675,1000um
Epi Layer Total Thickness: 2~5.5um -
AlGaN/GaN On SiC HEMT Epi Wafer
GaN-On-SiC Epi Wafer
Substrate Size: 4 inch,6 inch
Substrate Thickness:500um
Substrate Type: 4H-SI



